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Updated: Mar 16, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects
Viet Phuong Pham1, Geun Young Yeom2
1SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 440-746, Republic of Korea.
Abstract:
Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2 ) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2 -based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS2 thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS2 in industry, as a guide for 2D material community, are also provided.

