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Updated: Mar 14, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Determination of the Nonequilibrium Steady State Emerging from a Defect
Bruno Bertini1, Maurizio Fagotti2
1SISSA and INFN, via Bonomea 265, 34136 Trieste, Italy.
Abstract:
We consider the nonequilibrium time evolution of a translationally invariant state under a Hamiltonian with a localized defect. We discern the situations where a light cone spreads out from the defect and separates the system into regions with macroscopically different properties. We identify the light cone and propose a procedure to obtain a (quasi)stationary state describing the late time dynamics of local observables. As an explicit example, we study the time evolution generated by the Hamiltonian of the transverse-field Ising chain with a local defect that cuts the interaction between two sites (a quench of the boundary conditions alongside a global quench). We solve the dynamics exactly and show that the late time properties can be obtained with the general method proposed.
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