You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Updated: Mar 10, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
A P Foster1, J K Maguire1, J P Bradley1
1Department of Physics and Astronomy, University of Sheffield , Sheffield S3 7RH, United Kingdom.
We studied nonlinear mechanical properties of gallium arsenide (GaAs) nanowires. Their cross-section shape controls how vibrations interact, enabling new sensor and conversion applications.
08:58Silicon Nanowires and Optical Stimulation for Investigations of Intra- and Intercellular Electrical Coupling
Published on: January 28, 2021
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: