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Optimization of InGaAs/InAlAs Avalanche Photodiodes
Jun Chen1, Zhengyu Zhang2, Min Zhu2
1School of Electronic and Information Engineering, Soochow University, Suzhou, 215006, China. junchen@suda.edu.cn.
Abstract:
In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises.
