Related Experiment Video

Updated: Mar 8, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.6K

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Kai Xu1,2, Dongxue Chen1,3,4, Fengyou Yang1,2

  • 1Chinese Academy of Sciences (CAS) Key Laboratory of Nanosystem and Hierarchy Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology , Beijing 100190, China.

Nano Letters
|January 18, 2017
PubMed
Summary

A novel method uses Bi2O3 corrosion to create sub-10 nm gaps, enabling ultrathin body field-effect transistors (FETs) with 8.2 nm channels. These 2D material devices show excellent performance and no short channel effects, paving the way for advanced integrated circuits.

Keywords:
2D materialsSub-10 nmfield-effect transistorsnanopatternsvery-large-scale integration

More Related Videos

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

8.3K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

12.1K

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.4K