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Growth of All-Wurtzite InP/AlInP Core-Multishell Nanowire Array
Fumiya Ishizaka1, Yoshihiro Hiraya1, Katsuhiro Tomioka1,2
1Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University , North 13 West 8, Sapporo 060-8628, Japan.
Nano Letters
|February 7, 2017
Summary
Researchers created all-wurtzite (WZ) InP/AlInP core-multishell nanowires using crystal structure transfer. This method successfully transferred the WZ phase to the AlInP shell, enabling new semiconductor material properties.
Area of Science:
- Semiconductor Nanowire Growth
- Materials Science
- Crystal Structure Engineering
Background:
- Core-multishell (CMS) nanowires (NWs) offer unique electronic and optical properties.
- Achieving specific crystal structures in heterostructures is crucial for device performance.
Purpose of the Study:
- To demonstrate the formation of all-wurtzite (WZ) InP/AlInP CMS NWs.
- To investigate the crystal structure transfer and properties of WZ AlInP shells.
Main Methods:
- Selective-area growth combined with a crystal structure transfer method.
- Transmission electron microscopy (TEM) for interface analysis.
- X-ray diffraction (XRD) reciprocal space mappings for lattice constant determination.
Main Results:
- Successfully formed all-wurtzite InP/AlInP CMS NWs.
- Confirmed WZ phase transfer to the AlInP shell, despite minor stacking faults at the core-shell interface.
- Determined lattice constants and tensile strain in WZ AlInP shells with varying Al content (25-54%).
- Observed cathode luminescence emissions at 1.6-2.1 eV, attributed to In-rich domains.
Conclusions:
- The crystal structure transfer method is effective for creating all-WZ InP/AlInP CMS NWs.
- WZ AlInP shells exhibit strain and composition fluctuations influencing their optical properties.
- These findings pave the way for novel WZ semiconductor nanostructures.
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