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Optical Trapping of Nanoparticles
Published on: January 15, 2013
InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band
Hai-Zhi Song1,2,3, Mukhtar Hadi4, Yanzhen Zheng5
1Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China. hzsong@uestc.end.cn.
Abstract:
A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 104-105 at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band.

