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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
Tao Lin1, Hao Chung Kuo2, Xiao Dong Jiang1
1Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning, 530004, China.
Nanoscale Research Letters
|February 26, 2017
Summary
Transient photoluminescence (PL) of green InGaN/GaN quantum well LEDs reveals two exciton recombination pathways. Indium fluctuations cause slow decay, while layer thickness variations cause fast decay, impacting green emission mechanisms.
Area of Science:
- Materials Science
- Solid State Physics
- Optoelectronics
Background:
- Indium Gallium Nitride (InGaN) / Gallium Nitride (GaN) multiple quantum wells (MQWs) are crucial for green light-emitting diodes (LEDs).
- Understanding the microscopic mechanisms behind their emission properties is essential for device optimization.
Purpose of the Study:
- To investigate the transient photoluminescence (PL) properties of green-emitting InGaN/GaN MQW LEDs.
- To elucidate the dominant microscopic mechanisms responsible for green emission and its dynamics.
Main Methods:
- Transient photoluminescence (PL) spectroscopy was employed to analyze the emission dynamics.
- The study focused on correlating PL decay pathways with material properties.
Main Results:
- Localized exciton recombination was identified as the primary mechanism for green emission.
- Two distinct decay pathways (fast and slow) were observed, attributed to indium compositional fluctuations and InGaN layer thickness variations, respectively.
- The contribution of these pathways varied with emission photon energy, with fast decay decreasing at lower energies.
Conclusions:
- The findings provide a clear microscopic understanding of the excitation-emission process in green InGaN/GaN MQW LEDs.
- The study highlights the role of material imperfections in influencing the optoelectronic properties of these devices.
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