ESR Study of (La,Ba)MnO₃/ZnO Nanostructure for Resistive Switching Device

Structure, electric, and resonance properties of (La,Ba)MnO₃/ZnO nanostructure grown on SrTiO₃ (001) substrate have been investigated. It is found that at room temperature and relatively low voltages (|V |< 0.2 V), the structure shows good rectification behavior with rectification factor near 210. Resistive switching properties are detected after application of higher voltages. Temperature evolution of magnetic phase composition of the sample is analyzed in detail, based on results of electron spin resonance measurements. It is shown that magnetic state below 260 K is characterized by coexistence of ferromagnetic and paramagnetic phases, but no evidence of magnetic phase separation is revealed at higher temperatures. Different driving mechanisms for resistive switching, such as magnetic phase separation and/or electric field-induced migration of oxygen vacancies, are discussed in the context of obtained results.