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Monolithic InGaAs Nanowire Array Lasers on Silicon-on-Insulator Operating at Room Temperature
Hyunseok Kim1, Wook-Jae Lee2, Alan C Farrell1
1Department of Electrical Engineering, University of California, Los Angeles , Los Angeles, California 90095, United States.
Nano Letters
|May 24, 2017
Summary
Researchers developed III-V nanowire array lasers integrated on silicon, enabling room-temperature operation. This breakthrough paves the way for compact, efficient optical links and practical nanowire laser applications.
Area of Science:
- Photonics
- Materials Science
- Nanotechnology
Background:
- Chip-scale light sources are vital for photonics.
- III-V semiconductor nanowires offer compact, high-performance emitters.
- Integrating nanowire emitters with silicon photonics remains a challenge.
Purpose of the Study:
- To demonstrate monolithic integration of III-V nanowire array lasers on a silicon-on-insulator (SOI) platform.
- To achieve room-temperature operation of integrated nanowire lasers.
- To enable efficient coupling of nanowire lasers with silicon waveguides.
Main Methods:
- Selective-area growth of InGaAs/InGaP core/shell nanowires on SOI.
- Formation of photonic crystal nanobeam cavities using nanowire arrays.
- Nanoepitaxy for coupling nanowire lasers with SOI waveguides.
Main Results:
- Optically pumped III-V nanowire array lasers monolithically integrated on SOI were demonstrated.
- The integrated lasers operated effectively at room temperature.
- Successful coupling between nanowire array lasers and SOI waveguides was achieved.
Conclusions:
- This work presents a novel platform for ultracompact and energy-efficient optical links.
- The demonstrated integration paves the way for practical and functional nanowire lasers.
- Monolithic integration on SOI overcomes key challenges in nanowire laser application.
