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A two-dimensional semiconductor transistor with boosted gate control and sensing ability.

Jing Xu1, Lin Chen1, Ya-Wei Dai1

  • 1State Key Laboratory of ASIC (Application-Specific Integrated Circuit) System, School of Microelectronics, Fudan University, Shanghai, China.

Science Advances
|June 1, 2017
PubMed
Summary
This summary is machine-generated.

Researchers developed a new substrate for two-dimensional (2D) materials, improving transistor gate control and enabling high-performance electronic and optoelectronic devices. This advancement enhances the potential of 2D materials in various applications.

Keywords:
2D materialsback gate transistorsmobilityphoto resposivityphotodetectersubthreshold swing

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology
  • Electrical Engineering

Background:

  • Two-dimensional (2D) materials are crucial for advanced electronics like transistors, photodetectors, and sensors.
  • Existing 2D material transistors face limitations in gate control due to thick dielectrics and unreliable transfer methods.
  • Enhanced gate control is essential for unlocking the full potential of 2D materials in diverse applications.

Purpose of the Study:

  • To introduce a novel substrate stack for improved fabrication and characterization of exfoliated 2D materials.
  • To demonstrate enhanced gate controllability in transistors based on molybdenum disulfide (MoS2) and rhenium disulfide (ReS2).
  • To showcase the potential of this platform for high-performance 2D material-based devices, particularly photodetectors.

Main Methods:

  • Fabrication of a new Al2O3/ITO (indium tin oxide)/SiO2/Si substrate stack for optical identification of 2D materials.
  • Exfoliation and transfer of high-quality 2D materials (MoS2 and ReS2) onto the engineered substrate.
  • Fabrication and characterization of back-gate transistors and photodetectors using the prepared 2D materials.

Main Results:

  • The novel substrate facilitates easy identification and transfer of high-quality exfoliated 2D materials.
  • Transistors exhibited excellent electrical characteristics: steep subthreshold swing (62 mV dec-1 for MoS2, 83 mV dec-1 for ReS2), high mobility, large on/off ratios (~107), and low operating gate bias (<3 V).
  • MoS2 and ReS2 photodetectors achieved record photoresponsivities: 4000 A W-1 (MoS2) and 760 A W-1 (ReS2) in depletion, exceeding 106 A W-1 in accumulation.

Conclusions:

  • The developed Al2O3/ITO/SiO2/Si substrate platform significantly enhances gate control for 2D material transistors.
  • This platform enables the creation of high-performance 2D electronic and optoelectronic devices with superior characteristics.
  • The findings pave the way for broader applications of 2D materials in areas requiring precise gate modulation and high sensitivity.