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Thermally Driven Resistive Switching in Solution-Processable Thin Films of Coordination Polymers
Shammi Rana1, Anupam Prasoon1, Plawan Kumar Jha1
1Department of Chemistry, Indian Institute of Science Education and Research (IISER) , Dr. Homi Bhabha Road, Pashan, Pune 411 008, India.
The Journal of Physical Chemistry Letters
|September 26, 2017
Summary
Researchers developed thermally driven resistive switching in silver-based metal-organic coordination polymer (Ag-TCNQ) thin films. This breakthrough enables high-performance, solution-processable nonvolatile memory devices.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Metal-organic coordination polymers (CPs) are explored for electronic applications.
- Controllable electrical conductivity in thin films is crucial for advanced devices.
Purpose of the Study:
- To demonstrate thermally driven resistive switching in semiconducting Ag-TCNQ CPs.
- To investigate the fabrication of high-quality Ag-TCNQ thin films.
- To understand the mechanism behind the resistive switching phenomenon.
Main Methods:
- Fabrication of Ag-TCNQ thin films using a layer-by-layer approach.
- Utilizing a sacrificial Cu-TCNQ layer on a thiolated Au substrate.
- Characterization of electrical resistance switching with temperature variation.
Main Results:
- Achieved reversible resistive switching between high-resistance state (300 K) and low-resistance state (400 K).
- Observed a significant resistance enhancement factor of approximately 10^6.
- Identified the mechanism as Schottky barrier alternation, not conductive filament formation.
Conclusions:
- Demonstrated thermally driven resistive switching in Ag-TCNQ CP thin films.
- Developed a sacrificial growth method for CP thin films on modified substrates.
- Highlights potential for solution-processable nonvolatile memory devices.
