Bias-dependent photoresponsivity of multi-layer MoS₂ phototransistors

We studied the variation of photoresponsivity in multi-layer MoS₂ phototransistors as the applied bias changes. The photoresponse gain is attained when the photogenerated holes trapped in the MoS₂ attract electrons from the source. Thus, the photoresponsivity can be controlled by the gate or drain bias. When the gate bias is below the threshold voltage, a small amount of electrons are diffused into the channel, due to large barrier between MoS₂ and source electrode. In this regime, as the gate or drain bias increases, the barrier between the MoS₂ channel and the source becomes lower and the number of electrons injected into the channel exponentially increases, resulting in an exponential increase in photoresponsivity. On the other hand, if the gate bias is above the threshold voltage, the photoresponsivity is affected by the carrier velocity rather than the barrier height because the drain current is limited by the carrier drift velocity. Hence, with an increase in drain bias, the carrier velocity increases linearly and becomes saturated due to carrier velocity saturation, and therefore, the photoresponsivity also increases linearly and becomes saturated.