Related Experiment Video
Updated: Feb 18, 2026
X-ray Beam Induced Current Measurements for Multi-Modal X-ray Microscopy of Solar Cells
Published on: August 20, 2019
Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time
Calvin Yi-Ping Chao1, Honyih Tu2, Thomas Meng-Hsiu Wu3
1Taiwan Semiconductor Manufacturing Company, Hsinchu Science Park, Hsinchu 300, Taiwan. calvin_chao@tsmc.com.
Abstract:
A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the noise source. The long tail of the random noise (RN) distribution is directly linked to the RTN from the pixel source follower (SF). The full 8.3 Mpixels are classified into four categories according to the observed RTN histogram peaks. A theoretical formula describing the RTN as a function of the time difference between the two phases of the correlated double sampling (CDS) is derived and validated by measured data. An on-chip time constant extraction method is developed and applied to the RTN analysis. The effects of readout circuit bandwidth on the settling ratios of the RTN histograms are investigated and successfully accounted for in a simulation using a RTN behavior model.
