Related Experiment Video
Updated: Feb 15, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
GaAs quantum dots in a GaP nanowire photodetector
P Kuyanov1, S A McNamee1, R R LaPierre1,2
1Department of Engineering Physics, Centre for Emerging Device Technologies, McMaster University, Hamilton, ON, L8S 4L7, Canada.
None:
We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p-i-n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor-liquid-solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.
Related Concept Videos
Quantum Numbers
The Quantum-Mechanical Model of an Atom
Gap Junctions
Gap Junctions
The Dot Product
Dot Product
In engineering, the dot product of any two vectors is the product of the magnitudes of the vectors and the cosine of the angle between them. It is denoted by a dot symbol between the two vectors.
Consider a vehicle pulling an object along the ground using a rope. If the rope makes an angle with the horizontal axis, the work done can be calculated using the dot product of the force applied and the object's displacement.
The dot...

