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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Graded Potential01:19

Graded Potential

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Graded potentials are localized fluctuations in the cell membrane's electrical charge, commonly found in the dendrites of neurons. The magnitude of these potential changes depends on the strength of the initiating stimulus. In a membrane at its resting potential, a graded potential signifies a voltage shift either above -70 mV or below -70 mV.
Graded potentials fall into two categories: depolarizing and hyperpolarizing. Depolarizing graded potentials typically occur when sodium (Na+) or...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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pH Scale02:41

pH Scale

80.6K
Hydronium and hydroxide ions are present both in pure water and in all aqueous solutions, and their concentrations are inversely proportional as determined by the ion product of water (Kw). The concentrations of these ions in a solution are often critical determinants of the solution’s properties and the chemical behaviors of its other solutes. Two different solutions can differ in their hydronium or hydroxide ion concentrations by a million, billion, or even trillion times. A common means of...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

Yu-Chuan Lin1, Bhakti Jariwala1, Brian M Bersch1

  • 1Department of Materials Science and Engineering, Materials Research Institute, and Center for 2D and Layered Materials (2DLM), The Pennsylvania State University , University Park, Pennsylvania 16802, United States.

ACS Nano
|January 24, 2018
PubMed
Summary
This summary is machine-generated.

Synthetically grown tungsten diselenide (WSe2) shows promise for advanced electronics. Understanding substrate interactions and defects is key to optimizing the performance of these atomically thin transition metal dichalcogenides (TMDs).

Keywords:
field-effect transistorsmetal−organic chemical vapor deposition (MOCVD)transition metal dichalcogenidestungsten diselenide (WSe2)two-dimensional materialsvan der Waals epitaxy

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Atomically thin transition metal dichalcogenides (TMDs) are crucial for next-generation electronics and optoelectronics.
  • Large-area, epitaxial TMDs require careful control over synthesis and substrate interactions.

Purpose of the Study:

  • To demonstrate device-ready synthetic tungsten diselenide (WSe2) using metal-organic chemical vapor deposition.
  • To investigate the factors influencing the properties of large-area, epitaxial TMDs.
  • To understand the impact of substrate interactions and defects on carrier transport.

Main Methods:

  • Metal-organic chemical vapor deposition (MOCVD) for synthesizing WSe2.
  • Fabrication and characterization of WSe2 transistors on sapphire substrates.
  • Analysis of 2D/3D (TMD/substrate) interactions and substrate step edge effects.

Main Results:

  • Epitaxial WSe2 growth on sapphire leads to substrate reconstruction and strong 2D/3D coupling affecting carrier transport.
  • Substrate step edges act as significant sources of carrier doping and scattering.
  • Transfer-free epitaxial WSe2 transistors exhibit ambipolar behavior, high on/off ratios (~10^7), high current density (1-10 μA·μm^-1), and good field-effect transistor mobility (~30 cm^2·V^-1·s^-1) at room temperature.

Conclusions:

  • Achieving electronic-grade epitaxial TMDs necessitates considering TMD precursors, substrate properties, and the 2D/3D interface.
  • The demonstrated WSe2 synthesis and characterization provide insights for optimizing future TMD-based electronic devices.