Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

1.2K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.2K
Equivalent Capacitance01:19

Equivalent Capacitance

721
From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
721
Equivalent Capacitance01:19

Equivalent Capacitance

2.2K
Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
2.2K
Capacitors and Capacitance01:18

Capacitors and Capacitance

9.6K
A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...
9.6K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.5K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.5K
Negative Regulator Molecules01:23

Negative Regulator Molecules

38.6K
Positive regulators allow a cell to advance through cell cycle checkpoints. Negative regulators have an equally important role as they terminate a cell’s progression through the cell cycle—or pause it—until the cell meets specific criteria.
38.6K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Influence of Device Structure and Manufacturing Thermal Budget on Channel Release Module in GAA NSFET and Process Optimization.

Nanomaterials (Basel, Switzerland)·2026
Same author

Stress Engineering in the Optimization of Next-Generation Hafnium-Based Ferroelectric Memory.

Nanomaterials (Basel, Switzerland)·2026
Same author

IFN-γ-primed MSC extracellular vesicles attenuate rheumatoid arthritis via PD-L1-driven T-cell suppression and bone preservation.

Journal of controlled release : official journal of the Controlled Release Society·2026
Same author

Ultralow Power Optoelectronic Reconfigurable Hf<sub>0.2</sub>Zr<sub>0.8</sub>O<sub><i>x</i></sub>-Based Antiferroelectric Device for Adaptive Image Recognition.

ACS applied materials & interfaces·2026
Same author

Organic-assisted band engineering enables high-performance self-powered solar-blind 4H-SiC photodetectors.

Optics letters·2026
Same author

Accelerating spiking neural networks with photonic reconfigurable devices.

Nature communications·2026
Same journal

Ultra-Sensitive UV Photodetectors Enabled by Built-in Electric Fields in Hierarchical NP-Type Porous Silicon.

Nanotechnology·2026
Same journal

Effect of sintering temperature on structural, microstructural and magnetic properties of La<sub>0.8</sub>Sr<sub>0.2</sub>MnO<sub>3</sub>: Evolution of faceting and terrace like morphology.

Nanotechnology·2026
Same journal

Engineered V2C MXene Anchored Cu Nanoparticles for Selective Nitrate/Nitrite Sensing and Magneto-Electrocatalytic Hydrogen Evolution Reaction.

Nanotechnology·2026
Same journal

Quantitative Mechanism Separation of Single-Event Transients in Nanosheet Transistors via TCAD Simulation.

Nanotechnology·2026
Same journal

Antibacterial, mechanical and curing properties of PMMA bone cement loaded with copper nanoparticles.

Nanotechnology·2026
Same journal

Deep learning-enabled self-powered bimodal flexible sensor for intelligent access control.

Nanotechnology·2026
See all related articles

Related Experiment Video

Updated: Feb 12, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.4K

2D negative capacitance field-effect transistor with organic ferroelectrics.

Heng Zhang1, Yan Chen2, Shijin Ding1

  • 1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.

Nanotechnology
|March 28, 2018
PubMed
Summary
This summary is machine-generated.

Researchers developed a novel 2D negative capacitance field-effect transistor (NCFET) using molybdenum disulfide and P(VDF-TrFE). This flexible electronic device overcomes Moore's Law limitations, reducing operating voltage and power consumption.

More Related Videos

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

2.9K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.7K

Related Experiment Videos

Last Updated: Feb 12, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.4K
In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays
10:05

In Vitro Multiparametric Cellular Analysis by Micro Organic Charge-modulated Field-effect Transistor Arrays

Published on: September 20, 2021

2.9K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.7K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • Moore's Law is approaching its physical limits, necessitating new electronic device architectures.
  • Two-dimensional (2D) materials offer high mobility and flexibility, crucial for next-generation electronics.
  • Negative capacitance field-effect transistors (NCFETs) promise to overcome thermal limits and reduce power consumption in conventional devices.

Purpose of the Study:

  • To demonstrate a novel 2D NCFET utilizing molybdenum disulfide (MoS2) channel and P(VDF-TrFE) gate dielectric.
  • To explore the potential of NCFETs for flexible electronic applications.
  • To investigate the performance characteristics of the fabricated 2D NCFET.

Main Methods:

  • Fabrication of a 2D NCFET with MoS2 as the channel material.
  • Integration of organic P(VDF-TrFE) as the gate dielectric layer.
  • Characterization of the device's electrical performance at room temperature.

Main Results:

  • Achieved a high on-/off-current ratio of 10^6.
  • Observed a minimum subthreshold swing (SS) of 21 mV/decade and an average SS of 44 mV/decade over four orders of magnitude of drain current.
  • Demonstrated the feasibility of NCFETs for flexible electronics.

Conclusions:

  • The developed 2D NCFET represents a significant advancement in overcoming Moore's Law limitations.
  • The device shows excellent performance metrics, including high on-/off-current ratio and low SS.
  • This work paves the way for low-power, high-performance flexible electronic devices.