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Updated: Feb 8, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Importance of Effective Surface Smoothness on the Electrical Performance of Organic Thin-Film Transistors
Abstract:
We presented further analysis to explain how the surface morphology influence the mobility of the organic thin film transistors with gate insulator having large undulated surface (GU-OTFTs) and introduced a new parameter in order to clearly understand the relation between surface roughness and field-effect mobility. The average of the slope between two adjacent points on the surface of a gate insulator, or effective surface smoothness (ES), was closely investigated. A smooth-contact-pressing (SCP) process affected the surface smoothness of the P(VDF-TrFE) insulator with a significant change in root-mean-square roughness (Zrms). It was found that the ES gives better explanation for the variation of the field-effect mobility of the GU-OTFTs than the Zrms.
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