Analog/RF Performance of T-Shape Gate Dual-Source Tunnel Field-Effect Transistor

Area of Science:

• Semiconductor Device Physics
• Nanoelectronics
• Materials Science

Background:

• Tunnel Field-Effect Transistors (TFETs) are promising for low-power applications due to their steep subthreshold swing.
• Existing TFET structures like LTFET and UTFET face challenges in achieving high on-state current and performance.

Purpose of the Study:

• To propose and investigate a novel silicon-based T-shape gate dual-source tunnel field-effect transistor (TGTFET).
• To comparatively analyze the structure, characteristics, and analog/RF performance of TGTFET against LTFET and UTFET.
• To establish design guidelines for TGTFET optimization.

Main Methods:

• Technology Computer-Aided Design (TCAD) simulations were employed for device investigation.
• Comparative analysis of TGTFET, LTFET, and UTFET structures and electrical characteristics.
• Parametric studies on doping concentration, geometric dimensions, and applied voltages.

Main Results:

• The TGTFET achieved an on-state current (I_ON) of 81 μA/μm and a switching ratio (I_ON/I_OFF) of 6.7 × 10¹⁰.
• Excellent subthreshold swing (SS_avg = 51.5 mV/dec, SS_min = 24.4 mV/dec) and robustness against drain-induced barrier lowering (DIBL).
• Superior analog/RF performance, including transconductance (g_m = 232 μS/μm) and cut-off frequency (f_T = 11.9 GHz), compared to UTFET and LTFET.

Conclusions:

• The T-shape gate and dual-source design significantly enhance tunneling efficiency and on-state current.
• TGTFET exhibits superior DC and AC characteristics, outperforming conventional TFET structures.
• The TGTFET is a highly attractive candidate for next-generation low-power analog/RF applications.