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Implementation of a CMOS/MEMS Accelerometer with ASIC Processes
1Institute of Electronic Engineering, National Chiao Tung University, Hsinchu 300, Taiwan. thomas.ee02g@nctu.edu.tw.
This study introduces a novel tri-axis accelerometer combining CMOS and MEMS technology. Fabricated using a 0.18 μm process, it achieves a resonant frequency of 5.35 kHz.
Area of Science:
- Micro-electromechanical systems (MEMS)
- Integrated circuit technology
Background:
- Development of miniaturized inertial sensors is crucial for various applications.
- Existing accelerometers face challenges in integration and performance.
Purpose of the Study:
- To present the design, simulation, and characterization of a novel CMOS/MEMS tri-axis accelerometer.
- To demonstrate the feasibility of monolithic integration for improved sensor performance.
Main Methods:
- Utilized a 0.18 μm application-specific integrated circuit (ASIC)-compatible CMOS/MEMS fabrication process.
- Developed an approximate analytical model for spring design.
- Performed mechanical characterization and resonant frequency analysis.
Main Results:
- Successfully fabricated a monolithic CMOS/MEMS tri-axis accelerometer.
- Achieved a resonant frequency of approximately 5.35 kHz for out-of-plane vibration.
- The device occupies a compact area of 1096 μm × 1256 μm.
Conclusions:
- The proposed design offers a viable solution for integrated tri-axis accelerometers.
- The CMOS/MEMS approach enables miniaturization and potentially enhanced performance.
- Further research can explore optimization for specific application requirements.
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