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Omnidirectional Absorber by the Void Plasmon Effect in the Visible Region with Greatly Enhanced Localized Electric
Shiwei Shu1,2, Chengping Huang3, Meng Zhang4
1College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, People's Republic of China.
Abstract:
We propose and investigate a wide-angle and high-efficiency absorber by using the void plasmon (VP) effect in a Fabry-Perot (FP)-like system, which consists of a perforated metal film and a ground metal plane separated by a dielectric spacer. A hybrid FP/VP resonance mode contributes to the high absorption efficiency. Besides the increased absorption, greatly enhanced localized electric-field intensity at "hot spots" (~ 2284 times) can be achieved. In addition, by varying the thickness of the perforated metal layer and the environmental refractive index, the position of resonance peak can be easily controlled. The proposed absorber can also work as a sensor for detecting the surrounding dielectric constant with the maximum value of the figure of merit (FOM) achieving 3.16 in theory. This work creates an alternative design for high-efficiency absorption devices.
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