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Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications
Published on: February 6, 2016
CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardness
Jinwu Park1, Geonwook Yoo2, Junseok Heo3
1Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, South Korea.
Abstract:
Notable progress achieved in studying MoS2 based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2 phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2 phototransistors and improve its radiation hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irradiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irradiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor.
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The Dot Product
Dot Product
In engineering, the dot product of any two vectors is the product of the magnitudes of the vectors and the cosine of the angle between them. It is denoted by a dot symbol between the two vectors.
Consider a vehicle pulling an object along the ground using a rope. If the rope makes an angle with the horizontal axis, the work done can be calculated using the dot product of the force applied and the object's displacement.
The dot...

