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Updated: Jan 25, 2026
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Optimization of Crystal Growth for Neutron Macromolecular Crystallography
Published on: March 13, 2021
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Surface-diffusion-limited growth of atomically thin WS2 crystals from core-shell nuclei.
Sunghwan Jo1, Jin-Woo Jung, Jaeyoung Baik
1Department of Emerging Materials Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, South Korea. chcho@dgist.ac.kr.
Nanoscale
|April 25, 2019
Summary
Researchers explored the growth of monolayer tungsten disulfide (WS2) crystals. Understanding these processes is key to advancing next-generation devices using 2D materials.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Atomically thin transition metal dichalcogenides (TMDs) exhibit unique properties for next-generation devices.
- Large-area monolayer TMD production is hindered by incomplete knowledge of growth mechanisms.
Purpose of the Study:
- To investigate the growth processes of monolayer tungsten disulfide (WS2) crystals.
- To elucidate the mechanisms governing WS2 crystal formation for improved device fabrication.
Main Methods:
- Utilized thermal chemical vapor deposition (CVD) for WS2 synthesis.
- Systematically adjusted growth conditions to observe nucleation and growth dynamics.
Main Results:
- Identified WO3-WS2 core-shell nanoparticles as crucial nucleation sites.
- Observed WS2 island growth via ripening and crystallization.
- Determined lateral monolayer WS2 growth occurs through adatom surface diffusion.
Conclusions:
- Provided fundamental insights into the CVD growth of monolayer WS2.
- Understanding these processes facilitates the scalable production of high-quality WS2 for electronic applications.
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