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Updated: Jan 25, 2026

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Nonvolatile Memory (NVM) Operation of Tunnel Field-Effect Transistor (TFET) Using Ferroelectric HfO₂ Sidewall
Ryoongbin Lee1, Kitae Lee1, Sihyun Kim1
1Inter-University Semiconductor Research Center (ISRC) and Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Abstract:
In this paper, we propose a new type of nonvolatile memory (NVM) device based on a tunnel field-effect transistor (TFETs) with Ferroelectric HfO₂ sidewall. By simply utilizing the ferroelectricity of orthorhombic HfO₂ and conventional sidewall spacer technique, TFET can operate as a NVM device. The polarized charges in the ferroelectric HfO₂ spacer induced by program/erase pulse modulate the tunneling barrier between the source and channel; thus, change the threshold voltage (V) of TFET. The proposed NVM TFET has lower subthreshold swing (SS) and higher on/off ratio than conventional NVM TFETs while maintaining equivalent program/erase efficiency. Further-more, we also investigate the optimal HfO₂ sidewall formation conditions to achieve higher NVM performances.
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