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Updated: Jan 25, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Analysis of Variation and Ferroelectric Layer Thickness on Negative Capacitance Nanowire Field-Effect Transistor
Jang Kyu Lee1, Changbeom Woo1, Jongsu Kim1
1Inter University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-744, Korea.
Abstract:
We investigate the interrelation between some variations and the stability of Negative Capacitance Field-Effect Transistors (NC FETs). When a variation effect is considered, stability issues which are making hysteretic operation should be considered for NC FETs as well. In this paper, to make sure of stability and hysteresis-free operation, a thickness margin of ferroelectric layer is suggested. It is the easiest solution for designing and surest method of vouching for hysteresis-free operation. Although some disadvantages which make subthreshold swing (SS) a bit higher than without a margin on thickness of ferroelectric layer (TFE) can be caused, both still high performance and stable operation can be achieved.
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