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Quantum Interferometry with a g-Factor-Tunable Spin Qubit
K Ono1,2, S N Shevchenko3,4,5, T Mori6
1Advanced device Laboratory, RIKEN, Wako-shi, Saitama 351-0198, Japan.
Abstract:
We study quantum interference effects of a qubit whose energy levels are continuously modulated. The qubit is formed by an impurity electron spin in a silicon tunneling field-effect transistor, and it is read out by spin blockade in a double-dot configuration. The qubit energy levels are modulated via its gate-voltage-dependent g factors, with either rectangular, sinusoidal, or ramp radio frequency waves. The energy-modulated qubit is probed by the electron spin resonance. Our results demonstrate the potential of spin qubit interferometry implemented in a silicon device and operated at a relatively high temperature.
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