High-Performance Nanofloating Gate Memory Based on Lead Halide Perovskite Nanocrystals.

Area of Science:

• Materials Science
• Nanoscience
• Optoelectronics

Background:

• Lead halide perovskites are crucial for optoelectronic devices like solar cells and LEDs.
• Halogen vacancy defects typically hinder device performance.
• Defect utilization in novel memory devices remains underexplored.

Purpose of the Study:

• To demonstrate the use of halogen vacancy defects in lead halide perovskite nanostructures for high-performance nanofloating gate memories (NFGMs).
• To develop a novel hybrid structure for nonvolatile memory applications.

Main Methods:

• Fabrication of a core-shell structure using CH3NH3PbBr3 nanocrystals (NCs) uniformly decorated on CdS nanoribbon (NR) surfaces via dip-coating.
• Characterization of the optoelectronic and memory properties of the hybrid CdS NR/CH3NH3PbBr3 NC devices.

Main Results:

• The hybrid device achieved an ultralarge memory window of 77.4 V.
• Demonstrated a long retention time of 12,000 s and a high current ON/OFF ratio of 7 × 10^7.
• Exhibited long-term air stability for 50 days, with the memory window being among the highest for low-dimensional nanostructure-based NFGMs.

Conclusions:

• Halogen vacancy defects in lead halide perovskite nanostructures can be effectively utilized to achieve high-performance NFGMs.
• The demonstrated strategy is versatile and applicable to other perovskite nanostructures for fabricating next-generation nonvolatile memories.
• This research opens new avenues for high-capacity memory devices based on perovskite nanostructures.