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MOSFET01:16

MOSFET

1.2K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.2K
MOSFET Amplifiers01:17

MOSFET Amplifiers

505
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
505
Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

834
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
834
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

801
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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Atomic Structure01:33

Atomic Structure

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Overview
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Related Experiment Video

Updated: Jan 22, 2026

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
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Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition

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In Situ Thermal Atomic Layer Etching for Sub-5 nm InGaAs Multigate MOSFETs.

Wenjie Lu1, Younghee Lee2, Jonas C Gertsch2

  • 1Microsystems Technology Laboratories , Massachusetts Institute of Technology , Cambridge , Massachusetts 02139 , United States.

Nano Letters
|June 29, 2019
PubMed
Summary
This summary is machine-generated.

Thermal atomic layer etching (ALE) enables precise fabrication of advanced semiconductor devices. This method achieves high-quality InGaAs and InAlAs nanostructures for high-performance electronics.

Keywords:
Atomic layer etchingFinFETs, ligand-exchangeIII−V semiconductorsInGaAsnanowires

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Ternary III-V compound semiconductors like InGaAs and InAlAs are crucial for advanced electronic devices.
  • Precise control over etching processes is essential for fabricating nanoscale structures.

Purpose of the Study:

  • To demonstrate thermal atomic layer etching (ALE) on ternary III-V compound semiconductors.
  • To investigate the application of thermal ALE in fabricating nanostructures and advanced electronic devices.

Main Methods:

  • Sequential, self-limiting fluorination using hydrogen fluoride (HF) and ligand-exchange reactions with dimethylaluminum chloride (DMAC).
  • Investigation on planar surfaces and 3D nanostructures, including vertical nanowires (VNWs).
  • Integration with in situ atomic layer deposition (ALD) for fabricating complex structures.

Main Results:

  • Achieved thermal ALE on InGaAs and InAlAs with radial etch rates of 0.24 and 0.62 Å/cycle on VNWs at 300 °C.
  • Demonstrated process with no increase in surface roughness after 200 cycles, showing selectivity and orientation dependence.
  • Fabricated InGaAs gate-all-around structures down to 3 nm width and n-channel InGaAs FinFETs with record performance.

Conclusions:

  • Thermal ALE is a viable and promising technique for precise etching of III-V semiconductors.
  • The developed ALE-ALD process enables fabrication of high-quality nanoscale devices with sharp interfaces.
  • Thermal ALE shows significant potential for high-volume manufacturing of advanced semiconductor devices.