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Influence of Ultra-Thin Ge₃N₄ Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO₂/Ge

Kumar Mallem1, S V Jagadeesh Chandra2, Minkyu Ju1

  • 1Information and Communication Device Laboratory, School of Information and Communication Engineering, Sungkyunkwan University, 2066, Seobu-ro, jangan-gu, suwon-si, gyeong gi-Do, 16419, Republic of Korea.

Journal of Nanoscience and Nanotechnology
|August 7, 2019
PubMed

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