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Planar and Three-Dimensional Printing of Conductive Inks
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Nonlinear Planar Hall Effect.

Pan He1, Steven S-L Zhang2,3, Dapeng Zhu1

  • 1Department of Electrical and Computer Engineering, and NUSNNI, National University of Singapore, 117576 Singapore.

Physical Review Letters
|August 7, 2019
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Summary
This summary is machine-generated.

Researchers discovered a new nonlinear Hall effect in topological insulator films. This effect, driven by spin-momentum locking, offers novel ways to convert spin currents into charge currents for spintronics applications.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • Three-dimensional topological insulators (TIs) possess unique surface states characterized by spin-momentum locking.
  • This spin-momentum locking property is a key feature for advancing spintronics research.

Purpose of the Study:

  • To report the observation of a novel type of Hall effect in a three-dimensional topological insulator (3D TI) film.
  • To investigate the origin and characteristics of this new Hall effect, distinct from conventional phenomena.

Main Methods:

  • Experimental observation of a Hall effect in a 3D TI, specifically Bi_{2}Se_{3} film.
  • Analysis of the Hall resistance scaling with applied electric and magnetic fields.
  • Characterization of the angular offset between Hall resistance and longitudinal resistance.

Main Results:

  • A new nonlinear planar Hall effect was observed in the 3D TI Bi_{2}Se_{3} film.
  • The Hall resistance showed linear scaling with both electric and magnetic fields.
  • A unique π/2 angle offset was found, differing from the π/4 offset in conventional effects.

Conclusions:

  • The novel nonlinear planar Hall effect arises from the conversion of nonlinear transverse spin current to charge current.
  • This conversion is driven by the interplay of spin-momentum locking and time-reversal symmetry breaking.
  • This phenomenon provides a new method for characterizing and utilizing nonlinear spin-to-charge conversion in topological quantum materials and noncentrosymmetric materials.