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Heating a crystalline solid increases the average energy of its atoms, molecules, or ions, and the solid gets hotter. At some point, the added energy becomes large enough to partially overcome the forces holding the molecules or ions of the solid in their fixed positions, and the solid begins the process of transitioning to the liquid state or melting. At this point, the temperature of the solid stops rising, despite the continual input of heat, and it remains constant until all of the solid is...
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A phase diagram combines plots of pressure versus temperature for the liquid-gas, solid-liquid, and solid-gas phase-transition equilibria of a substance. These diagrams indicate the physical states that exist under specific conditions of pressure and temperature and also provide the pressure dependence of the phase-transition temperatures (melting points, sublimation points, boiling points). Regions or areas labeled solid, liquid, and gas represent single phases, while lines or curves represent...
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Topotactic Phase Transition Driving Memristive Behavior.

Venkata R Nallagatla1,2, Thomas Heisig1,3, Christoph Baeumer1,3

  • 1Peter Gruenberg Institute, Forschungszentrum Juelich GmbH and JARA-FIT, 52425, Juelich, Germany.

Advanced Materials (Deerfield Beach, Fla.)
|August 24, 2019
PubMed
Summary
This summary is machine-generated.

Brownmillerite SrFeO2.5 enables resistive switching in memristive devices via a reversible phase transition. Device orientation influences the electric-field-induced transition, impacting oxygen vacancy channel behavior.

Keywords:
XPEEMbrownmilleriteresistive switchingtopotactic phase transition

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Redox-based memristive devices are crucial for nonvolatile memory and neuromorphic computing.
  • Performance relies on redox processes and oxygen-ion dynamics.
  • Brownmillerite SrFeO2.5 shows promise for resistive-switching memory due to oxygen-ion transport.

Purpose of the Study:

  • To elucidate the redox processes driving resistive switching in SrFeO2.5 memristive devices.
  • To understand the influence of crystal orientation on the electric-field-induced phase transition.
  • To provide mechanistic insights into SrFeO2.5-based memristors.

Main Methods:

  • X-ray absorption spectromicroscopy was employed to investigate the material.
  • Analysis focused on the phase transition between brownmillerite SrFeO2.5 and perovskite SrFeO3.
  • Comparison of (001) and (111) oriented SrFeO2.5 devices.

Main Results:

  • A reversible, redox-based topotactic phase transition between insulating SrFeO2.5 and conductive SrFeO3 causes resistive switching.
  • (001) oriented devices exhibit large-area transitions with in-plane oxygen vacancy channels.
  • (111) oriented devices show localized transitions with out-of-plane oxygen vacancy channels.

Conclusions:

  • The study clarifies the metal-insulator phase transition mechanism in SrFeO2.5 memristive devices.
  • Device orientation critically affects the resistive-switching behavior and phase transition characteristics.
  • Findings offer detailed insights for designing advanced memristive devices.