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Real-Time Proxy-Control of Re-Parameterized Peripheral Signals using a Close-Loop Interface

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Published on: May 8, 2021

Parasitic engineering for RRAM control.

P R Shrestha^1,2, D M Nminibapiel^2,3, D Veksler²

¹Theiss Research, La Jolla, CA, USA.

Solid-State Electronics

|September 27, 2019

Summary

This summary is machine-generated.

Minimizing current overshoot in filamentary resistive random-access memory (RRAM) is not always beneficial. Optimizing parasitic capacitance, rather than minimizing it, enhances filament stability and control in RRAM devices.

Keywords:

Current overshoot Forming Resistive random access memory (RRAM)Switching variability

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Area of Science:

Materials Science
Electrical Engineering
Device Physics

Background:

Current overshoot in filamentary resistive random-access memory (RRAM) is often seen as a source of variability.
Attempts to minimize this overshoot involve reducing parasitic capacitance in 1T-1R or 1R-1R structures.
This approach faces challenges in large-scale memory array designs.

Purpose of the Study:

To investigate the relationship between parasitic capacitance, current overshoot, and filament stability in RRAM.
To challenge the conventional approach of minimizing parasitic capacitance for improved device performance.
To propose an optimized parasitic capacitance strategy for enhanced filament control.

Main Methods:

Utilizing an energy-based understanding of filamentary forming in RRAM devices.
Analyzing the impact of varying parasitic capacitance levels on filament formation.
Comparing device behavior in optimized versus minimized capacitance configurations.

Main Results:

Contrary to common belief, minimizing parasitic capacitance can lead to insufficient current for stable filament formation.
An optimized parasitic capacitance is crucial for achieving reliable filamentary switching.
The study demonstrates that controlled parasitic capacitance enhances filament stability and device control.

Conclusions:

The conventional strategy of minimizing parasitic capacitance in RRAM is counterproductive for filament stability.
Parasitic capacitance should be optimized, not minimized, to ensure robust filament formation and control.
This finding offers a new perspective for designing high-performance and reliable RRAM arrays.