Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

555
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
555
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

913
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
913
P-N junction01:11

P-N junction

1.1K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
Biasing of P-N Junction01:16

Biasing of P-N Junction

1.8K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.8K
Joule-Thomson Effect01:21

Joule-Thomson Effect

9.2K
The Joule-Thomson effect, also known as the Joule-Kelvin effect, describes the temperature change of a fluid when it is forced through a valve or porous plug while keeping it in a thermally insulated environment. This experiment is called a throttling process. This is an important effect widely used in refrigeration and the liquefaction of gases.
This experiment forces high-pressure gas through a throttle valve or a porous plug to a lower-pressure region. The gas expands as it passes through to...
9.2K
Impedances and Admittance01:23

Impedances and Admittance

1.9K
In the realm of AC circuits, passive circuit elements like resistors, inductors, and capacitors take on a different character when characterized by phasor voltage and current. Their behavior is expressed through impedance, a vital concept in AC circuit analysis.
Impedance is a measure of resistance to sinusoidal current flow in an AC circuit. Unlike their behavior in DC circuits, where inductors appear as short circuits and capacitors as open circuits, the behavior of these components in AC...
1.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Reversible coma and elevated central venous pressure: warning signs of acute superior vena cava graft thrombosis following Warden procedure: a case report.

BMC anesthesiology·2026
Same author

SRSF1/Mcl-1 Axis Drives Apoptosis Evasion and Shapes the Immune Microenvironment to Promote Gastric Cancer Progression.

Human mutation·2026
Same author

Application and Molecular Modification of Enzyme in Textile Degumming.

Applied biochemistry and biotechnology·2026
Same author

Nonlinear compensation using a robust neural network for noisy samples in a high-speed coherent optical transceiver.

Optics express·2026
Same author

Triple-valve replacement in repaired tetralogy of fallot patients with mirror-image dextrocardia: a case report.

Journal of cardiothoracic surgery·2026
Same author

Technical Approach for Structural Analysis of an Unknown Compound in Huoxiang Zhengqi Oral Liquid based on Linear Ion Trap Mass Spectrometry.

Journal of visualized experiments : JoVE·2026
Same journal

Gaussian-modulated continuous-variable quantum key distribution over 60 km fiber using an integrated silicon photonic receiver.

Optics letters·2026
Same journal

E2E-OCT: end-to-end joint learning model using optical coherence tomography images for vocal cord leukoplakia diagnosis.

Optics letters·2026
Same journal

Holographic generation of panoramic 3D scenes by concave ellipsoidal mirror reflection.

Optics letters·2026
Same journal

Dual-pilot phase recovery with pair-wise maximum-ratio combining for coherent PONs.

Optics letters·2026
Same journal

Mapping the whispering gallery modes of a CaF<sub>2</sub> disk resonator with half-tapered fibers to estimate the fundamental mode volume.

Optics letters·2026
Same journal

Quantitative estimation of deep-subwavelength scale via dark-field scattering axial energy concentration decay profiles.

Optics letters·2026
See all related articles

Related Experiment Video

Updated: Jan 18, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K

Subwavelength adiabatic multimode Y-junctions.

Longhui Lu, Deming Liu, Max Yan

    Optics Letters
    |October 1, 2019
    PubMed
    Summary
    This summary is machine-generated.

    Researchers developed a novel chirped subwavelength slot Y-junction for silicon photonics. This compact, CMOS-compatible device enables efficient multimode splitting with low loss, advancing mode-division multiplexing systems.

    More Related Videos

    Microwave Photonics Systems Based on Whispering-gallery-mode Resonators
    12:18

    Microwave Photonics Systems Based on Whispering-gallery-mode Resonators

    Published on: August 5, 2013

    17.5K
    Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
    11:08

    Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

    Published on: November 30, 2012

    19.5K

    Related Experiment Videos

    Last Updated: Jan 18, 2026

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
    05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    10.2K
    Microwave Photonics Systems Based on Whispering-gallery-mode Resonators
    12:18

    Microwave Photonics Systems Based on Whispering-gallery-mode Resonators

    Published on: August 5, 2013

    17.5K
    Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
    11:08

    Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities

    Published on: November 30, 2012

    19.5K

    Area of Science:

    • Silicon photonics
    • Integrated optics
    • Nanophotonics

    Background:

    • Adiabatic multimode Y-junctions are crucial for mode splitting in silicon photonics.
    • Fabrication limitations lead to excess loss and crosstalk in conventional designs.

    Purpose of the Study:

    • To propose and demonstrate a novel Y-junction structure for improved adiabatic multimode splitting.
    • To overcome experimental limitations in lithography for silicon photonics devices.

    Main Methods:

    • Design of a circular-hole-based chirped subwavelength slot Y-junction.
    • Optimization of hole radii and positions under fabrication constraints.
    • Experimental demonstration of symmetric and asymmetric four-mode Y-junctions.

    Main Results:

    • Achieved excellent performance close to ideal Y-junctions over a broad wavelength span.
    • Demonstrated compact, CMOS-compatible devices with large fabrication tolerance.
    • Successfully implemented both symmetric and asymmetric four-mode Y-junctions.

    Conclusions:

    • The proposed Y-junction structure significantly enhances adiabatic branching properties.
    • This design offers a promising solution for low-loss mode splitting in silicon photonics.
    • The technology is extendable to more modes and suitable for mode-division multiplexing systems.