Related Experiment Video
Updated: Jan 4, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect
Do-Kyung Kim1, Hyeonju Lee2, Xue Zhang3
1School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea. kdk7362@naver.com.
Abstract:
Flexible organic ferroelectric field-effect transistors (Fe-FETs) have attracted attention for next-generation memory applications. A fundamental understanding of the electrical properties and mechanical stability of transistors is a prerequisite to realizing practical flexible electronics. Here, we demonstrate the solvent-dependent electrical characteristics and mechanical stability of flexible Fe-FETs. Poly(vinylidene fluoride-trifluoro-ethylene) (P(VDF-TrFE)) based Fe-FETs were fabricated by using dimethylformamide (DMF) and methyl ethyl ketone (MEK) solvents on a polyimide substrate. P(VDF-TrFE) from DMF formed a smoother surface than a surface from MEK; the surface property greatly affected the electrical properties and mechanical stability of the devices. Larger hysteresis and higher mobility were obtained from Fe-FET using DMF compared to those characteristics from using MEK. Furthermore, Fe-FET using DMF showed lower degradation of on-current and mobility under repetitive mechanical stress than an MEK-based Fe-FET, due to its excellent semiconductor-insulator interface. These results will guide appropriate solvent selection and contribute to the improvement of flexible Fe-FET electrical properties and mechanical stability in the next generation of memory devices.
More Related Videos
Related Concept Videos
Field Effect Transistor
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Characteristics of JFET
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...

