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A Dual-Gate MoS2 Photodetector Based on Interface Coupling Effect
Fuyou Liao1, Jianan Deng2, Xinyu Chen1
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Small (Weinheim an Der Bergstrasse, Germany)
|November 27, 2019
Summary
This study introduces a dual-gated molybdenum disulfide (MoS2) phototransistor that utilizes interface coupling effects (ICE) for enhanced performance. This novel design achieves ultrahigh responsivity and detectivity, overcoming limitations of traditional photodetectors.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- 2D transition metal dichalcogenides (TMDs) like MoS2 show promise for optoelectronics.
- Existing MoS2 photodetectors often rely on photogating effects, limiting control and performance (responsivity, speed, dark current).
Purpose of the Study:
- To demonstrate a dual-gated (DG) MoS2 phototransistor operating via interface coupling effect (ICE).
- To investigate the impact of ICE on photoelectric performance and overcome limitations of previous designs.
Main Methods:
- Fabrication of a dual-gated MoS2 phototransistor.
- Application of simultaneous negative top-gate (V_TG) and positive back-gate (V_BG) voltages.
- Characterization of device performance under varying conditions.
Main Results:
- Achieved ultrahigh responsivity (R) of ~10^5 A/W and detectivity (D*) of ~10^14 Jones.
- Demonstrated modulation of response time via ICE.
- Showcased effective trapping of photogenerated holes in the depleted region under TG.
Conclusions:
- Interface coupling effect (ICE) significantly modulates photoelectric performance in MoS2 DG phototransistors.
- This work paves the way for advanced 2D TMDs optoelectrical applications.
- Further research into DG structured phototransistors is warranted.
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