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Updated: Jan 2, 2026

Low-energy Cathodoluminescence for OxyNitride Phosphors
Published on: November 15, 2016
Non-Rare-Earth Na3AlF6:Cr3+ Phosphors for Far-Red Light-Emitting Diodes
Dechao Yu1, Yuanshu Zhou1, Chenshuo Ma1
1Department of Materials Science and Engineering, Rutgers, The State University of New Jersey, 607 Taylor Road, Piscataway, New Jersey 08854, United States.
Abstract:
Emerging phototherapy in a clinic and plant photomorphogenesis call for efficient red/far-red light resources to target and/or actuate the interaction of light and living organisms. Rare-earth-doped phosphors are generally promising candidates for efficient light-emitting diodes but still bear lower quantum yield for the far-red components, potential supply risks, and high-cost issues. Thus, the design and preparation of efficient non-rare-earth activated phosphors becomes extremely important and arouses great interest. Fabrication of Cr3+-doped Na3AlF6 phosphors significantly promotes the potential applications by efficiently converting blue excitation light of a commercial InGaN chip to far-red broadband emission in the 640-850 nm region. The action response of phototherapy (∼667-683 nm; ∼750-772 nm) and that of photomorphogenesis (∼700-760 nm) are well overlapped. Based on the temperature-dependent steady luminescence and time-resolved spectroscopies, energy transfer models are rationally established by means of the configurational coordinate diagram of Cr3+ ions. An optimal sample of Na3AlF6:60% Cr3+ phosphor generates a notable QY of 75 ± 5%. Additionally, an InGaN LED device encapsulated by using Na3AlF6:60% Cr3+ phosphor was fabricated. The current exploration will pave a promising way to engineer non-rare-earth activated optoelectronic devices for all kinds of photobiological applications.
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