High efficiency spin filtering in magnetic phosphorene

Phosphorene has a unique set of characteristics such as a semiconducting nature, good carrier mobility and low-spin orbit coupling aspects which makes it a highly prospective two dimensional material for cross-hybrid architectures in nanoelectronics, spintronics, and optoelectronics. In the spintronic context, the creation of a stable magnetic order in phosphorene can be immensely beneficial for designing phosphorene spin circuits. In this work, we present high efficiency spin filtering behaviour in magnetically rendered phosphorene. First, we calculate the effect of doping various 3d block elements in phosphorene to introduce a stable magnetic order. Next, by varying doping concentrations in distinct doping configurations, an extensive phase diagram has been obtained depicting the presence of various electronic and magnetic states. This allows us to achieve a high magnetisation in the presence of various transition metal atoms, with a spin polarisation of ∼100% in half-metallic regimes. The transport behaviour reveals a map of the spin injection efficiency showing enhancement with doping concentration and reaching a perfect spin filtering capacity of ∼100% in the presence of Ti, Cr, Mn, Co, and Fe atoms. The present results offer new insights into engineered designs of multi-functional phosphorene spintronic circuits.