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Published on: March 9, 2019
3D Integrable W/SiNx/n-Si/p-Si 1D1R Unipolar Resistive Random Access Memory Synapse for Suppressing Reverse Leakage
Chae Soo Kim1, Taehyung Kim1, Kyung Kyu Min1
1Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
Abstract:
In this paper, we pose reverse leakage current issue which occurs when resistive random access memory (RRAM) is used as synapse for spiking neural networks (SNNs). To prevent this problem, 1 diode-1 RRAM (1D1R) synapse is suggested and simulated to examine their current rectifying chracteristics, Furthermore, high density of 1 K 3D 1D1R synapse array structure and its process flow are proposed.
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