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Electron Reflectometry for Measuring Nanostructures on Opaque Substrates.

Lawrence H Friedman1, Wen-Li Wu2

  • 1National Institute of Standards and Technology, Materials Measurement Science Division, Gaithersburg, MD 20910, United States of America.

Applied Physics Letters
|March 14, 2020
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This summary is machine-generated.

Electron Reflectometry (ER) offers a simplified method for measuring nanostructure dimensions by analyzing specularly reflected electrons. This technique aids semiconductor metrology, defect detection, and line-width measurements.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Physics

Background:

  • Semiconductor industry requires precise nanostructure dimensional metrology.
  • Prior work demonstrated Reflective Small Angle Electron Scattering (RSAES) for nanostructure measurement.
  • RSAES measures entire reflected electron scattering patterns.

Purpose of the Study:

  • Introduce Electron Reflectometry (ER) as a simplified dimensional measurement technique.
  • Explore ER's applicability to periodic, pseudo-periodic, and statistically stationary nanostructures.
  • Demonstrate ER's potential for defect detection and line-width measurements.

Main Methods:

  • Utilizing specular reflection of electrons from an electronically opaque surface.
  • Measuring the intensity of the specularly reflected electron beam, ignoring scattered beams.
  • Simulating ER applications for dimensional metrology.

Main Results:

  • Electron Reflectometry (ER) simplifies dimensional measurement compared to RSAES.
  • ER can be applied to various nanostructures and nanopatterns on opaque substrates.
  • Simulations show ER's effectiveness in defect detection and line-width analysis.

Conclusions:

  • ER provides a faster and potentially cheaper alternative for nanostructure dimensional measurement.
  • ER complements existing metrology techniques in the semiconductor industry.
  • ER offers a new pathway for exploiting reflected electrons in metrology.