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High-performance III-VI monolayer transistors for flexible devices.
Jianhui Chen1, Shuchang Cai1, Rui Xiong1
1Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, P. R. China. bssa@fzu.edu.cn.
Physical Chemistry Chemical Physics : PCCP
|March 21, 2020
Summary
Group III-VI MX monolayers show promise for flexible electronics. These materials exhibit excellent structural stability and device performance, meeting stringent semiconductor industry standards for next-generation applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Group III-VI MX monolayers (M = Ga, In; X = S, Se, Te) are recognized for high carrier mobility.
- Potential applications in advanced electronic devices drive research into their performance limits.
Purpose of the Study:
- Investigate the performance limits of MX monolayer metal oxide semiconductor field-effect transistors (MOSFETs) at the sub-10 nm scale.
- Assess the suitability of MX monolayers for next-generation flexible electronic devices.
Main Methods:
- Density functional theory (DFT) calculations.
- Ab initio quantum transport simulations.
Main Results:
- MX monolayers exhibit good structural stability and mechanical isotropy with large ultimate strains and low Young's modulus.
- MX monolayer MOSFETs demonstrate excellent device performance, meeting International Technology Roadmap for Semiconductors (ITRS) 2013 requirements.
- Achieved low sub-threshold swings (68–108 mV dec⁻¹) indicate favorable gate control for fast switching.
Conclusions:
- MX monolayers are suitable for high-performance and flexible electronic devices.
- Findings provide insights for designing and applying MX monolayer-based MOSFETs in next-generation electronics.
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