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Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning
Tian-Yu Wang1, Jia-Lin Meng, Zhen-Yu He
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China. linchen@fudan.edu.cn qqsun@fudan.edu.cn.
Nanoscale
|April 16, 2020
Summary
Flexible memristors fabricated at room temperature using physical vapor deposition offer low operating voltages and stable performance. These devices enable the simulation of brain-like learning and pave the way for wearable neuromorphic computing.
Area of Science:
- Materials Science
- Neuroscience
- Computer Engineering
Background:
- Memristors are promising for neuromorphic computing, potentially overcoming von Neumann architecture limitations.
- Flexible memristor development is hindered by high-temperature processing, high operating voltages, and resistance variability.
- Room-temperature fabrication offers advantages like low cost, reduced thermal dissipation, and compatibility with flexible electronics.
Purpose of the Study:
- To develop a flexible memristor using a room-temperature physical vapor deposition (PVD) process.
- To evaluate the memristor's resistive switching characteristics, including operating voltage, uniformity, retention, multilevel storage, and flexibility.
- To simulate synaptic plasticity and array learning behaviors for neuromorphic applications.
Main Methods:
- Fabrication of memristors using a fully physical vapor deposition (PVD) process at room temperature without heat treatment.
- Characterization of resistive switching properties, including set/reset voltages, endurance, retention, and multilevel storage.
- Simulation of synaptic functions such as excitatory post-synaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation/depression (LTP/LTD), and learning-forgetting curves.
- Demonstration of array learning behavior using trainable biomemristors.
Main Results:
- The fabricated memristors exhibited excellent resistive switching with ultralow set/reset voltages (0.48 V/-0.39 V).
- Devices showed uniform resistance distribution (10%/15%), stable retention, multilevel storage, and reliable flexibility (10 mm radius).
- Simulations successfully replicated key synaptic plasticities and brain-like array learning behaviors.
Conclusions:
- A novel room-temperature PVD process enables the fabrication of high-performance flexible memristors.
- These memristors demonstrate potential for low-cost, wearable neuromorphic computing devices.
- The study advances artificial synapse arrays and opens new avenues for brain-inspired electronics.
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