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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Bipolar resistive switching in HoCrO3 thin films
Dwipak Prasad Sahu1, S Narayana Jammalamadaka1
1Magnetic Materials and Device Physics Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Hyderabad 502 285, India.
Nanotechnology
|May 15, 2020
Summary
This study details a HoCrO3 memristor exhibiting stable resistive switching, excellent endurance, and reliable memory performance. Oxygen vacancies are key to its ionic conductive channels, paving the way for advanced memory devices.
Area of Science:
- Materials Science
- Solid-State Electronics
- Nanotechnology
Background:
- Memristors are crucial for next-generation electronic memory devices.
- Understanding resistive switching mechanisms is vital for device optimization.
Purpose of the Study:
- To investigate the resistive switching characteristics of a HoCrO3 (HCO) based memristor.
- To analyze the stability, endurance, and retention of the device.
- To elucidate the underlying conduction mechanisms.
Main Methods:
- Fabrication of an Ag/HCO/fluorine doped tin oxide memristor device.
- Characterization of resistive switching using electrical measurements.
- Impedance spectroscopy and resistance vs. temperature measurements to analyze conduction mechanisms.
Main Results:
- The device demonstrated stable bipolar resistive switching with a high ON/OFF resistance ratio.
- Excellent endurance and retentivity over 30 days were observed.
- Impedance spectroscopy and temperature-dependent resistance confirmed bulk resistance and ionic conductive channels formed by oxygen vacancies.
Conclusions:
- The HoCrO3 memristor shows promising characteristics for reliable and stable memory applications.
- Oxygen vacancies play a critical role in the device's resistive switching behavior.
- These findings contribute to the development of advanced resistive switching memory devices.
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