Related Experiment Video

Updated: Dec 17, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

8.1K

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Yiqun Zhao1,2, Libin Tang3,4,5, Shengyi Yang6

  • 1School of Physics, Beijing Institute of Technology, Beijing, 100081, China.

Nanoscale Research Letters
|July 1, 2020
PubMed

Keywords:
GeTeHeterojunctionOptoelectronic characteristicsPhotovoltaic detector

More Related Videos

Developing High Performance GaP/Si Heterojunction Solar Cells10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

7.8K
Using Neutron Spin Echo Resolved Grazing Incidence Scattering to Investigate Organic Solar Cell Materials06:05

Using Neutron Spin Echo Resolved Grazing Incidence Scattering to Investigate Organic Solar Cell Materials

Published on: January 15, 2014

8.0K

Related Concept Videos

P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
993
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.5K
Photoelectric Effect02:26

Photoelectric Effect

When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
38.3K
Gas Chromatography: Types of Detectors-II01:19

Gas Chromatography: Types of Detectors-II

In gas chromatography, different detectors are employed to meet specific analytical needs. These detectors are often categorized based on their detection mechanisms and the types of compounds they are best suited to analyze. Thermal Conductivity Detectors (TCD), Flame Ionization Detectors (FID), and Electron Capture Detectors (ECD) represent common categories, each with unique operating principles and applications. However, beyond these, several other detectors are designed for more specialized...
960