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Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs.

Tomoya Akamatsu¹, Katsuhiro Tomioka, Junichi Motohisa

¹Graduate School of Information Science and Technology and Research Center for Integrated Quantum Electronics, Hokkaido University, North 14 West 9, Sapporo 060-0814, Japan.

|July 14, 2020

Summary

This summary is machine-generated.

Semiconductor nanowires (NWs) were engineered into light-emitting diodes (LEDs) for on-demand single photon sources. These indium phosphide/indium arsenide phosphide (InP/InAsP) heterostructure NW LEDs exhibit electroluminescence in the near-infrared region.

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Area of Science:

Materials Science
Nanotechnology
Quantum Optics

Background:

Semiconductor nanowires (NWs) offer nanoscale control for quantum structures.
Their size and shape can be modified to enhance light extraction and control spontaneous emission.
NWs are promising for nanoscale light sources across various spectral bands.

Purpose of the Study:

To grow InP/InAsP/InP axial heterostructure nanowires (NWs).
To fabricate vertical NW array light-emitting diodes (LEDs).
To demonstrate NWs as a step towards on-demand single photon sources.

Main Methods:

Selective-area growth of InP/InAsP/InP axial heterostructure NWs.
Embedding an InAsP layer as the active region.
Fabrication and characterization of vertical NW array LEDs.

Main Results:

The fabricated NW array LEDs exhibited rectifying electrical characteristics.
Electroluminescence was observed originating from the embedded InAsP active layer.
The emission was detected in the near-infrared spectral region.

Conclusions:

Vertical InP/InAsP/InP NW array LEDs were successfully demonstrated.
These devices show potential for on-demand single photon generation.
The results highlight NWs as a viable platform for advanced nanoscale light sources.