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Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Jang Hyun Kim1, Hyun Woo Kim2, Young Suh Song2,3

  • 1School of Electrical Engineering, Pukyong National University, Busan 48513, Korea.

Micromachines
|August 23, 2020
PubMed
Summary

This study analyzes L-shaped tunnel field-effect transistors (TFETs) using TCAD simulations. Gate work function variation impacts on-state current, hump current, and ambipolar current differently, offering insights for device optimization.

Keywords:
L-shaped TFETambipolar current (IAMB) variationband-to-band tunnelinghigh-κ/metal gate (HKMG)hump current (IHUMP) variationon-state current (ION) variationtunnel field-effect transistor (TFET)work-function variation (WFV)

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