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Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film

Dapeng Wang1,2,3, Mamoru Furuta4,5, Shigekazu Tomai6

  • 1Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Normal University, Xian 710119, China.

Nanomaterials (Basel, Switzerland)
|September 12, 2020
PubMed

Keywords:
InSnZnO thicknessNBIS-induced instabilityleakage currentoxide TFTsphoto-excitation

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