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Remote Capacitive Sensing in Two-Dimensional Quantum-Dot Arrays.

Jingyu Duan^1,2, Michael A Fogarty^1,2, James Williams¹

¹London Centre for Nanotechnology, University College London, London WC1H 0AH, United Kingdom.

|September 18, 2020

Summary

This summary is machine-generated.

Researchers created quantum dots in silicon nanowires using a novel process. They demonstrated how floating gates enhance charge sensitivity, enabling precise detection of charge transitions in parallel nanowires.

Keywords:

Quantum dots Reflectometry electrostatic coupling floating gate coupler

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Last Updated: Dec 8, 2025

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Published on: October 13, 2017

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Area of Science:

Semiconductor physics
Quantum computing hardware
Nanotechnology

Background:

Quantum dots are crucial for quantum computing.
Silicon nanowires offer a scalable platform for quantum dot fabrication.
Controlling charge interactions in quantum dots is essential for device performance.

Purpose of the Study:

To investigate gate-induced quantum dots in silicon nanowires.
To explore capacitive coupling in a 2x2 quantum dot array.
To demonstrate the role of floating gates in enhancing charge sensitivity.

Main Methods:

Fabrication of quantum dots using foundry-compatible fully depleted silicon-on-insulator (FD-SOI) process.
Utilizing split gates to form bilinear arrays of quantum dots.
Employing a single-electron-box sensor to measure charge state transitions.

Main Results:

Demonstrated capacitive coupling in a 2x2 quantum dot array.
Showcased coupling between two parallel silicon nanowires via floating electrodes.
Quantified charge sensitivity decay with varying dot-sensor separation and configuration.

Conclusions:

Floating gates significantly enhance charge sensitivity in silicon nanowire quantum dots.
The developed dual-nanowire structure enables sensitive detection of charge state transitions.
This work advances the development of scalable silicon-based quantum computing architectures.