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Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased

Yi Wen1, Xiao-Jie Xu1, Meng-Ling Tao1

  • 1School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China.

Nanoscale Research Letters
|November 10, 2020
PubMed

Keywords:
CFM-JTEHigh efficiencySilicon carbideUltra-high voltage

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