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We developed a new diffraction-limited photocurrent microscopy technique using broadband excitation and a stable interferometer. This method accurately measures photocurrent spectra without complex processing, demonstrating its capability with a GaAs device.

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Area of Science:

  • Optics and Photonics
  • Materials Science
  • Semiconductor Physics

Background:

  • Photocurrent (PC) microscopy is a valuable technique for characterizing semiconductor devices.
  • Existing methods can be limited by stability and require complex data processing.
  • There is a need for high-accuracy, stable PC microscopy techniques.

Purpose of the Study:

  • To present a novel diffraction-limited photocurrent microscopy setup.
  • To demonstrate its phase-stable, common-path interferometric design.
  • To showcase its application in spectral analysis of semiconductor devices.

Main Methods:

  • Utilized broadband excitation for wide spectral range measurements.
  • Employed an inherently phase-stable common-path interferometer.
  • Recorded photocurrent spectra of a bulk Gallium Arsenide (GaAs) device.

Main Results:

  • Achieved diffraction-limited spatial resolution in the visible spectral range.
  • Demonstrated high accuracy and stability without active feedback or post-processing.
  • Obtained PC spectra comparable to optical transmission data for GaAs.

Conclusions:

  • The developed PC microscopy technique offers a robust and accurate method for material characterization.
  • Its inherent stability simplifies operation and data analysis.
  • The technique shows promise for detailed investigation of semiconductor properties.