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Photoelectrical Properties Investigated on Individual Si Nanowires and Their Size Dependence
Xiaofeng Hu1,2, Shujie Li1,2, Zuimin Jiang1
1State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433, China.
Nanoscale Research Letters
|January 29, 2021
Summary
Vertically aligned silicon nanowires (Si NWs) show excellent photoconductance. Their photocurrent, enhanced by laser intensity, depends on diameter and length, with smaller, shorter nanowires performing best.
Area of Science:
- Nanotechnology
- Materials Science
- Semiconductor Physics
Background:
- Vertically aligned silicon nanowires (Si NWs) are crucial for nanoelectronic devices.
- Understanding their photoelectrical properties is key to optimizing performance.
Purpose of the Study:
- To investigate the photoconductive properties of individual Si NWs.
- To explore the influence of laser intensity, diameter, and length on these properties.
- To elucidate the underlying mechanisms of photoresponse in Si NWs.
Main Methods:
- Fabrication of periodically ordered arrays of Si NWs with controlled dimensions.
- Photoconductive atomic force microscopy (PCAFM) for individual nanowire analysis.
- Electrostatic force microscopy (EFM) to study charge trapping.
- Current-voltage (I-V) curve analysis to confirm Schottky barrier changes.
Main Results:
- Si NWs exhibit significant photocurrent increase with laser intensity, demonstrating good photoconductance and photoresponse.
- Photoenhanced conductance is attributed to photoinduced Schottky barrier changes and photogenerated charge trapping.
- Smaller diameter and shorter length Si NWs show superior photoconductive properties.
- Optimized dimensions lead to enhanced photoelectrical performance.
Conclusions:
- Si NWs possess excellent photoelectrical properties, tunable by size.
- PCAFM and EFM provide critical insights into photoresponse mechanisms.
- Findings guide the optimization of Si NWs for advanced nanodevices.
